CTR Services

Characterization, test, reliability and failure analysis, security analysis

Overview

© Fraunhofer ENAS

Within APECS, we develop advanced characterization tools and methods for chiplets and QMI systems covering diverse signal types (DC, RF, high-speed digital, mm-wave, and optical), enabling highly accurate and low-noise measurements of heterointegrated devices, sub-THz dielectric material characterization, and the identification of technology weaknesses to validate design and simulation models at chiplet, module, and system levels.

We provide cleanroom-based facilities for wafer- and chip-level testing of optical, RF, and mm-wave signals (up to 80 V and 18 GHz), including dedicated test heads, enabling highly accurate and low-noise evaluation of heterointegrated devices as well as efficient volume-testing methods that deliver statistically relevant feedback for technology development and pilot fabrication.

We offer comprehensive reliability testing and failure analysis capabilities for chiplets and heterointegration (HI), enabling the identification of technology- and application-related defect risks, new failure modes, and degradation mechanisms, while integrating quality and reliability considerations into development to ensure robust design, manufacturing quality, and stable long-term device performance.

We implement architecture-level security measures and security IP blocks from chiplet and heterointegrated devices up to the system level, establish a robust framework to ensure hardware security along the entire manufacturing chain, and characterize and enhance device and system resilience against physical attacks.

Available Services

Name Description Tools Technical Details
Cryogenic HF-Tester S-Parameter test in cryogenic environment of Packages with coax connection HF-Test in a cryogenic environment Full-2-Port S-Parameter: 0.1 - 20 GHz @ 4K Temp.

Cooling capacity of > 1 Watt at 4 K
X-Ray Nano-CT 3D visualization of small components or sections of components with x-ray CT <200nm resolution
RF-characterization of single dies with copper pillar / bumps or packages or wafer up to 6" -RF Test with modulated signals -Vector Signal Generator up to 110GHz, BW 2GHz - Spectrum Analyzer up to 170GHz, BW up to 5GHz - AWG (4Ch) with 65 GSps - Temperatur Chuck 25°C ... 125°C RF Characterization beyond 100GHz -Two-Port S-Parameter Characterization up to 170GHz - System Specific Characterization (EVM, ACLR, AM-to-PM) up to 110GHz, BW = 2GHz - 5G NR acc. 3GPP Release 17 - 60GHz WiGiG acc. IEEE Std 802.11ay-2021 -FMCW Radar Chip
WLR characterization of - characterization on wafer level w.r.t. degradation effects, esp. front end - setup of customized degradation models - model integration into design system Wafer Level Reliability Characterization - 300mm Probe Station - -40 °C … 300 °C -measurement equipment up to 3kV
X-Ray CT for non-destructive inspection and damage analysis -high resolution 3D imaging of the volume of materials, composites, components -condition and damage analysis, geometry determination of internal dimensions -non-destructive initial inspection, combination with advanced methods (e.g. metallography with SEM analysis) X-Ray CT -max. Voltage 180kV -max. sample size 250mm/3kg -geometric magnification 1,4-300x -realistic resolution in practice up to 1µm
High Precision characterization of mixed signal devices Measurement of analog-/mixed-signal sensor front end (sub-)circuits and chiplets including ADCs and DACs with up to 20bit resolution Low Noise Power Source Mixed-signal testbench with Logic Analyser and 8 high precsion power source (for power supply and current/voltage refenences) with very low noise (including filters) precise current measurement down to 100pA resolution.
Near-field scanning for electromagnetic characterization (EMC, functionality, quality) from static B-field up to 140 GHz (H- or E-field) -Measurement of EM-nearfields close to the DUT (few mm or tens of µm) -Measurement of EMC, functionality or quality issues (hot-spot) detection -Near-field to far-field characterization Near-field scanner up to 140 GHz -Measurement volume:50x80x50cm - Spatial resolution:1µm -Frequencies from 0 to 140 GHz -Combination of simulation and measurment in CST
Characterization of MEMS components at wafer level Electrical probing and measuring of electric parameters and RF scatter parameters MEMS wafer level probe syste 200 mm and 300 mm wafer diameter, Resistance, Isolation, low-resistance measurement, inductance, capacitance, loss factor, scatter parameters (up to 110 GHz)
Characterization of PICs and MOEMS at wafer level Optical and electrical probing, spectrum analysis, laser excitation, optical power meter, FTIR spectral analyzer
Analysis of motion of open and of packaged MEMS Laser Doppler Vibration analysis system in VIS spectrum range for open MEMS, 1D- and 3D motion Laser Doppler Vibration analysis system in NIR spectrum range for packaged MEMS Stroboscopic motion analysis for open MEMS MEMS motion analysis system at wafer / chip level 200 mm wafer and chips
PXIe test and measurement system NI-Testhardware

Additional CTR services offered by APECS partners:

  • EMC scanning system for near field, emissions source microscopy, ESD susceptiblity and others
  • Holographic EM scanning system
  • 5 axis ESD test roboto for IEC 61000-4-2
  • Transmission line pulser
  • Radiation source X-ray
  • Harmoinics characterization system
  • Picosecond time domain capture system for pulses
  • Standard EMC testing, radiated emissions, immunity, Burst, EFT etc.
  • IV and time domain characterization of non-linear devices